RUMORED BUZZ ON GERMANIUM

≤ 0.15) is epitaxially developed with a SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which the construction is cycled by way of oxidizing and annealing levels. Due to the preferential oxidation of Si above Ge [sixty eight], the initial Si1–cost. Curiously, the group identified that increasing the Si cap thickness furt